Direct Evidence of GeO Volatilization from GeO₂/Ge and Impact of Its Suppression on GeO₂/Ge Metal–Insulator–Semiconductor Characteristics

• Koji Kita

• Sho Suzuki

• Hideyuki Nomura

• Toshitake Takahashi

• Tomonori Nishimura

• Akira Toriumi

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 47 (4S), 2349-, 2008-04-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360847871783925120
• NII Article ID: 210000064485
• DOI: 10.1143/jjap.47.2349
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.47.2349
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.47.2349/pdf
• Data Source:
  • Crossref
  • CiNii Articles