Electrical Characterization of Metal–Oxide–Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots

• Yan-Li Pei

• Takafumi Fukushima

• Tetsu Tanaka

• Mitsumasa Koyanagi

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 47 (4S), 2680-, 2008-04-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360566396807246976
• NII論文ID: 210000064565
• DOI: 10.1143/jjap.47.2680
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.47.2680
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.47.2680/pdf
• データソース種別:
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  • CiNii Articles