Nitrogen-Content Dependence of Crystalline Structures and Resistivity of Hf–Si–N Gate Electrodes for Metal–Oxide–Semiconductor Field-Effect Transistors

• Kazuaki Miyamoto

• Kouhei Furumai

• Ben E. Urban

• Hiroki Kondo

• Shigeaki Zaima

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 48 (4R), 045505-, 2009-04-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360003446854611456
• NII論文ID: 210000066495
• DOI: 10.1143/jjap.48.045505
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.48.045505
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.48.045505/pdf
• データソース種別:
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  • CiNii Articles