Investigation of InAlAs Oxide/InP Metal–Oxide–Semiconductor Structures Formed by Wet Thermal Oxidation
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 48 (4S), 04C093-, 2009-04-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360847871784786688
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- NII論文ID
- 210000066604
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- ISSN
- 13474065
- 00214922
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- データソース種別
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