Photoluminescence Properties of Self-Assembled InAs Quantum Dots Grown on (001) and (113)B GaAs Substrates by Molecular Beam Epitaxy under a Slow Growth Rate Condition

• Tomoya Takahashi

• Takuya Mukai

• Ken Morita

• Takahiro Kitada

• Toshiro Isu

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 48 (4S), 04C128-, 2009-04-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360847871784798848
• NII論文ID: 210000066639
• DOI: 10.1143/jjap.48.04c128
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.48.04C128
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.48.04C128/pdf
• データソース種別:
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  • CiNii Articles