Floating Gate Memory Based on Ferritin Nanodots with High-k Gate Dielectrics

• Kosuke Ohara

• Yukiharu Uraoka

• Takashi Fuyuki

• Ichiro Yamashita

• Toshitake Yaegashi

• Masahiro Moniwa

• Masaki Yoshimaru

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 48 (4S), 04C153-, 2009-04-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360284921831387648
• NII Article ID: 210000066664
• DOI: 10.1143/jjap.48.04c153
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.48.04C153
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.48.04C153/pdf
• Data Source:
  • Crossref
  • CiNii Articles