Full Three-Dimensional Simulation of Ion-Sensitive Field-Effect Transistor Flatband Voltage Shifts Due to DNA Immobilization and Hybridization
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 49 (1), 01AG07-, 2010-01-20
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360566396808596352
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- NII Article ID
- 210000067869
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles