Full Three-Dimensional Simulation of Ion-Sensitive Field-Effect Transistor Flatband Voltage Shifts Due to DNA Immobilization and Hybridization

Journal

Citations (1)*help

See more

References(18)*help

See more

Details 詳細情報について

  • CRID
    1360566396808596352
  • NII Article ID
    210000067869
  • DOI
    10.1143/jjap.49.01ag07
  • ISSN
    13474065
    00214922
  • Data Source
    • Crossref
    • CiNii Articles

Report a problem

Back to top