Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation

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Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 49(4), 04DA02-04DA02, 2010-04-20

    IOP Publishing

Codes

  • NII Article ID (NAID)
    210000068160
  • ISSN
    0021-4922
  • Data Source
    Crossref 
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