Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation

• Kazuya Matsumoto

• Seiichiro Higashi

• Hideki Murakami

• Seiichi Miyazaki

抄録

We have investigated effects of annealing temperature and heating and cooling rates during millisecond annealing on the activation of B and As in the Si lattice. In the case of As + -implanted samples, efficient dopant activation was observed at a temperature higher than 1000 K, while it was observed at a temperature higher than 1400 K in the case of B-implanted samples. The sheet resistance ( R S ) of B-implanted samples monotonically decreases with temperature, and no significant dependence on heating rate ( R h ) or cooling rate ( R c ) is observed. On the other hand, As + -implanted samples show significant dependence of R S on R h and R c . We have performed thermal plasma jet (TPJ) annealing on an As 2 + -implanted sample, and obtained an ultrashallow junction (USJ) with a junction depth ( X j ) of 11.9 nm and a R S of 1095 Ω/sq. B USJ is also obtained with a X j of 23.5 nm and a R S of 392 Ω/sq. Precise control of R h and R c in addition to annealing temperature is quite important for achieving highly efficient doping in USJ.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 49 (4S), 04DA02-, 2010-04-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360003446855302144
• NII論文ID: 210000068160
• DOI: 10.1143/jjap.49.04da02
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.49.04DA02
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.49.04DA02/pdf
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