Enhancement of Current Drivability of Nanograting Polycrystalline Silicon Thin-Film Transistors

• Shin-Ichiro Kuroki

• Xiaoli Zhu

• Koji Kotani

• Takashi Ito

Abstract

The nanograting channel structure was introduced to a polycrystalline silicon thin-film transistor (poly-Si TFT) to enhance the current drivability. With the formation of the nanograting in the channel region, the effective width was enhanced without the increase in the planar area. At the same overdrive voltage, the drain current of the nanograting TFTs was larger than that of the conventional planar ones at the same planar dimension. In addition to the increase in the effective channel width, the drivability enhancement was further caused by the increase in electron mobility. The increase in the electron field-effect mobility by the nanograting structure was 42% at the maximum.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 49 (4S), 04DJ11-, 2010-04-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360003446855374080
• NII Article ID: 210000068329
• DOI: 10.1143/jjap.49.04dj11
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.49.04DJ11
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.49.04DJ11/pdf
• Data Source:
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  • CiNii Articles