Integrated Bio-Imaging Sensor Array with Complementary Metal–Oxide–Semiconductor Cascode Source–Drain Follower

Abstract

<jats:p> A new bio-imaging sensor with photosystem I (PSI) of <jats:italic>Thermosynechococcus elongatus</jats:italic> and complementary metal–oxide–semiconductor (CMOS) circuits is demonstrated. Photons are converted into electrons by PSI, and electrons are detected as an electric signal by a CMOS integrated circuit. For a sensor circuit, a 4 ×4 sensor array with a CMOS source–drain follower is designed and fabricated by a standard CMOS process. An extended-gate electrode and an SU-8 passivation layer are formed on a CMOS chip by a post-CMOS process, and PSI is electrostatically fixed on the electrode. A 3×4 image of the pattern of light illuminated on a chip is taken with the sensor array, where four cells are used as reference cells. </jats:p>

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