Integrated Bio-Imaging Sensor Array with Complementary Metal–Oxide–Semiconductor Cascode Source–Drain Follower
Abstract
<jats:p> A new bio-imaging sensor with photosystem I (PSI) of <jats:italic>Thermosynechococcus elongatus</jats:italic> and complementary metal–oxide–semiconductor (CMOS) circuits is demonstrated. Photons are converted into electrons by PSI, and electrons are detected as an electric signal by a CMOS integrated circuit. For a sensor circuit, a 4 ×4 sensor array with a CMOS source–drain follower is designed and fabricated by a standard CMOS process. An extended-gate electrode and an SU-8 passivation layer are formed on a CMOS chip by a post-CMOS process, and PSI is electrostatically fixed on the electrode. A 3×4 image of the pattern of light illuminated on a chip is taken with the sensor array, where four cells are used as reference cells. </jats:p>
Journal
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 49 (4S), 04DL01-, 2010-04-01
IOP Publishing
- Tweet
Details 詳細情報について
-
- CRID
- 1360566396808806912
-
- NII Article ID
- 210000068359
-
- ISSN
- 13474065
- 00214922
-
- Data Source
-
- Crossref
- CiNii Articles