Step Coverage Quality of Cu Films by Supercritical Fluid Deposition Compared with Chemical Vapor Deposition

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<jats:p> Feasibility of step coverage (SC) by supercritical fluid deposition (SCFD) of Cu was evaluated using a finite element method (FEM) simulation with experimentally estimated kinetics and transport properties of the precursor. This SC by Cu-SCFD was compared with that by chemical vapor deposition (CVD). SCFD showed superior SC, especially for ultra narrow features less than 1 µm wide, although CVD has a higher diffusion coefficient. This superior SC was due to the non-linear reaction kinetics of SCFD (CVD has linear reaction kinetics), where precursor concentration had negligible effect on growth rate when the precursor concentration was higher than about 1 mol/L. </jats:p>

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