Deep Electronic Levels of Al_xGa_1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy

• Kimihito Ooyama

• Katsuya Sugawara

• Shinya Okuzaki

• Hiroyuki Taketomi

• Hideto Miyake

• Kazumasa Hiramatsu

• Tamotsu Hashizume

Abstract

Deep electronic levels of Al x Ga 1- x N (0.25< x <0.60) were investigated by deep level transient spectroscopy (DLTS) and photocapacitance methods. Si-doped AlGaN layers were grown on an AlN/sapphire template by metal–organic vapor phase epitaxy. DLTS analysis using a sampling time window of up to 100 s showed two dominant deep levels with activation energies (Δ E ) higher than 1.0 eV in Al x Ga 1- x N with x =0.25 and 0.37. The densities of those levels were higher than 1×10 16 cm -3 . For the Al 0.60 Ga 0.40 N sample, the deeper levels (Δ E >1.5 eV) were detected by photocapacitance measurement. It was found that the energy position of the dominant deep level closely followed the Fermi level stabilization energy reported by Walukiewicz et al. [J. Cryst. Growth 269 (2004) 119], indicating that the origin of the dominant deep level in AlGaN is related to a defect complex including anti-site defects and divacancies.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 49 (10R), 101001-, 2010-10-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360847871785877888
• NII Article ID: 210000069281
• DOI: 10.1143/jjap.49.101001
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.49.101001
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.49.101001/pdf
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