Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication

• Masaya Mochizuki

• Yuta Kitabayashi

• Tomoya Nakajima

• Daiki Satoi

• Fumitaro Ishikawa

• Masahiko Kondow

• Makoto Hara

• Chiharu Kimura

• Hidemitsu Aoki

• Takashi Sugino

Abstract

We investigate inductively coupled plasma deep dry etching of Al 0.8 Ga 0.2 As for photonic crystal (PC) fabrication using Cl 2 , BCl 3 , and CH 4 chemistry. The characteristic AlO x deposition is observed during the etching, resulting in the reduction of etching rate. BCl 3 is considered to scavenge the deposited AlO x by its reductive reaction. CH 4 passivates the etching sidewall, as well as enhances the deposition of AlO x . Concerning the impact of pattern size, a pronounced inverse reactive ion etching (RIE) lag is observed, which is beneficial for small-size PC fabrication typically with a hole diameter of 100–500 nm. From the findings, we successfully fabricated a PC structure with air holes having an aspect ratio of 8 and a diameter of 110 nm.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (4S), 04DG15-, 2011-04-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360847871786284032
• NII Article ID: 210000070332
• DOI: 10.1143/jjap.50.04dg15
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.04DG15
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.04DG15/pdf
• Data Source:
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  • CiNii Articles