Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations

• Hiroyuki Handa

• Ryota Takahashi

• Shunsuke Abe

• Kei Imaizumi

• Eiji Saito

• Myung-Ho Jung

• Shun Ito

• Hirokazu Fukidome

• Maki Suemitsu

抄録

Graphene can be grown on three major low-index substrates of Si(111), (110), and (001) by forming a 3C-SiC thin film and by subliming Si atoms from the top few layers of the SiC film. We have investigated the structure of graphene/3C-SiC interface by cross-sectional transmission electron microscopy (XTEM) and Raman-scattering spectroscopy. While the interface layer quite similar to that on the graphene/6H-SiC(0001) face is found to exist on the 3C-SiC(111)/Si(111) substrate, no such interface structure exists on the (110)- and (001)-oriented faces.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (4S), 04DH02-, 2011-04-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360284921832864768
• NII論文ID: 210000070339
• DOI: 10.1143/jjap.50.04dh02
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.04DH02
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.04DH02/pdf
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