Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure

• Tomohiro Yamaguchi

• Hidetomo Umeda

• Tsutomu Araki

• Yasushi Nanishi

Abstract

A growth method, named droplet elimination by radical-beam irradiation (DERI), consisting of a metal-rich growth process (MRGP) and a droplet elimination process (DEP), was developed for the growth of InGaN ternary alloys. In the MRGP using the growth of InGaN under a metal-rich condition [N * /(In+Ga)<1], Ga was preferentially incorporated into the growing InGaN and In was forced out to the surface. This In was transformed to epitaxial InN on top of the InGaN underlayer in the DEP using a subsequent nitrogen radical-beam irradiation. By repeating the MRGP and DEP, an InN/InGaN periodic structure was successfully fabricated.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (4S), 04DH08-, 2011-04-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360284921832867584
• NII Article ID: 210000070345
• DOI: 10.1143/jjap.50.04dh08
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.04DH08
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.04DH08/pdf
• Data Source:
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  • CiNii Articles
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