Observation of Band Gap in Epitaxial Bilayer Graphene Field Effect Transistors

• Shinichi Tanabe

• Yoshiaki Sekine

• Hiroyuki Kageshima

• Masao Nagase

• Hiroki Hibino

抄録

Bilayer graphene was grown on the Si-face of SiC by thermal decomposition. Its electronic properties were investigated in top-gate Hall bar devices. By controlling the carrier density using gate voltage, we were able to access the charge neutrality point. The conductance at the charge neutrality point showed a strong temperature dependence, and its temperature dependence was well fitted with thermal activation and variable-range hopping mechanisms. The electrical detection of a band gap opening in bilayer graphene grown on SiC is a promising step toward the realization of graphene-based electronics using epitaxial graphene.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (4S), 04DN04-, 2011-04-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360003446856179712
• NII論文ID: 210000070405
• DOI: 10.1143/jjap.50.04dn04
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.04DN04
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.04DN04/pdf
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