Simple Fabrication Technique for Field-Effect Transistor Array Using As-Grown Single-Walled Carbon Nanotubes

• Shinya Aikawa

• Erik Einarsson

• Taiki Inoue

• Rong Xiang

• Shohei Chiashi

• Junichiro Shiomi

• Eiichi Nishikawa

• Shigeo Maruyama

抄録

A carbon nanotube field-effect transistor (CNT-FET) is a promising candidate for future electronic devices; however, its fabrication process is still challenging. We propose a simple fabrication technique for CNT-FET arrays using as-grown single-walled CNTs (SWNTs) as the gate channel. In this study, a hydrophobic self-assembled monolayer (SAM) was used to restrict the catalyst-supporting area after the fabrication of an electrode array. Since it is known that droplets are trapped at rough edges of a hydrophobic surface, the deposition of a liquid-based catalyst, followed by alcohol catalytic chemical vapor deposition (ACCVD) produced SWNTs that grew only at the corners of electrode edges. The current–voltage ( I – V ) characterization of FETs with a 40 µm channel width showed that 98% of the fabricated devices were electrically connected and more than 50% were functional FETs ( I ON / I OFF > 10 2 ).

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (4S), 04DN08-, 2011-04-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360003446856182144
• NII論文ID: 210000070409
• DOI: 10.1143/jjap.50.04dn08
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.04DN08
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.04DN08/pdf
• データソース種別:
  • Crossref
  • CiNii Articles
  • KAKEN