Simple Fabrication Technique for Field-Effect Transistor Array Using As-Grown Single-Walled Carbon Nanotubes
Abstract
<jats:p> A carbon nanotube field-effect transistor (CNT-FET) is a promising candidate for future electronic devices; however, its fabrication process is still challenging. We propose a simple fabrication technique for CNT-FET arrays using as-grown single-walled CNTs (SWNTs) as the gate channel. In this study, a hydrophobic self-assembled monolayer (SAM) was used to restrict the catalyst-supporting area after the fabrication of an electrode array. Since it is known that droplets are trapped at rough edges of a hydrophobic surface, the deposition of a liquid-based catalyst, followed by alcohol catalytic chemical vapor deposition (ACCVD) produced SWNTs that grew only at the corners of electrode edges. The current–voltage (<jats:italic>I</jats:italic>–<jats:italic>V</jats:italic>) characterization of FETs with a 40 µm channel width showed that 98% of the fabricated devices were electrically connected and more than 50% were functional FETs (<jats:italic>I</jats:italic> <jats:sub>ON</jats:sub>/<jats:italic>I</jats:italic> <jats:sub>OFF</jats:sub> > 10<jats:sup>2</jats:sup>). </jats:p>
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 50 (4S), 04DN08-, 2011-04-01
IOP Publishing
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Details
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- CRID
- 1360003446856182144
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- NII Article ID
- 210000070409
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles
- KAKEN