Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition

• Takashi Matsumoto

• Keiichi Mizuguchi

• Takahiro Horii

• Shiho Sano

• Tsutomu Muranaka

• Yoichi Nabetani

• Satoshi Hiraki

• Hideaki Furukawa

• Akihiro Fukasawa

• Shingo Sakamoto

• Shigeru Hagihara

• Hiroshi Kono

• Kazuhiro Kijima

• Osamu Abe

• Kouji Yashiro

Abstract

Transparent conducting ZnO films are deposited by plasma-assisted deposition on glass and plastic substrates at temperatures as low as 50 °C. The effects of Ga doping and growth temperature on electrical properties are studied using Hall measurement and X-ray diffraction. Carrier density increases with Ga doping for both 50 and 300 °C growth. For low-temperature growth, the carrier mobility in undoped ZnO films is the same as that in high-temperature-grown films, but it becomes lower as the Ga doping level becomes higher. Lattice expansion in both c and a axes directions is observed for low-temperature-grown highly Ga-doped films. The relation between the mobility reduction and the lattice expansion is discussed.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (5S2), 05FB13-, 2011-05-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360002218596663936
• NII Article ID: 210000070524
• DOI: 10.1143/jjap.50.05fb13
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.05FB13
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.05FB13/pdf
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN