Robust Noise Characteristics in Carbon Nanotube Transistors Based on Stochastic Resonance and Their Summing Networks

• Yasufumi Hakamata

• Yasuhide Ohno

• Kenzo Maehashi

• Koichi Inoue

• Kazuhiko Matsumoto

Abstract

Robust noise characteristics in carbon nanotube field-effect transistors (CNT-FETs) based on stochastic resonance (SR) were demonstrated to detect small signals in noisy environments. When weak pulse trains were applied to a CNT-FET in the subthreshold regime, the correlation coefficient between the input and output signals increased upon adding an appropriate intensity of noise. Offset-voltage dependences were investigated, and moreover, a virtual summing network was formed using CNT-FETs having different offset voltages. The measurement indicated that responses correlated with the input signals were enhanced in a wide range of noise intensity. Therefore, the summing network based on SR is a promising candidate for highly sensitive label-free sensors which are to be utilized in unintentionally noisy environments.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (6S), 06GE03-, 2011-06-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360566396809710592
• NII Article ID: 210000070671
• DOI: 10.1143/jjap.50.06ge03
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.06GE03
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.06GE03/pdf
• Data Source:
  • Crossref
  • CiNii Articles