Annealing Effect of W Incorporated Diamond-Like Carbon Fabricated by Ga Focused Ion Beam Chemical Vapor Deposition

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<jats:p> The effects of thermal annealing of W incorporated diamond-like carbon (W-DLC) films fabricated with focused ion beam chemical vapor deposition (FIB-CVD) were investigated using X-ray absorption fine structure near the carbon K-edge (C-K NEXAFS) and the combination of Rutherford backscattering (RBS) and elastic recoil detection analysis (ERDA). W-DLC films were annealed for 32 h at temperatures, <jats:italic>T</jats:italic> <jats:sub>a</jats:sub>, between 673 and 1073 K. Comparing the <jats:italic>T</jats:italic> <jats:sub>a</jats:sub> dependences of Ga and H contents obtained from RBS-ERDA and the sp<jats:sup>2</jats:sup>/(sp<jats:sup>2</jats:sup> + sp<jats:sup>3</jats:sup>) ratios from C-K NEXAFS, it was found that even a trace amount of W incorporation into DLC films fabricated by Ga<jats:sup>+</jats:sup> FIB-CVD may cause a significant sp<jats:sup>3</jats:sup> →sp<jats:sup>2</jats:sup> structural change. </jats:p>

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