Determination of Exciton Binding Energy of GaInNAs Quantum Well Structures by Piezoelectric Photothermal Spectroscopy Compared with Photoreflectance Measurements

• Koshiro Kashima

• Atsuhiko Fukuyama

• Kentaro Sakai

• Hirosumi Yokoyama

• Masahiko Kondow

• Tetsuo Ikari

Abstract

The exciton binding energies ( E xb ) of a dilute nitride Ga 1- y In y N 0.012 As 0.988 layer ( y = 0.0 to 4.5%) with the thickness of 100 nm were determined by both piezoelectric photothermal (PPT) and photoreflectance (PR) spectroscopies. Curve-fitting analyses were carried out using a three-dimensional direct allowed-transition model with the Voigt function as a convolution integral for PPT and with Aspnes' formula for PR. The observed estimation error for PR was about two times larger than that of PPT. Therefore, we conclude that PPT is a novel methodology for determining E xb when it is small and two expected critical energies exist in the narrow energy region.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (6S), 06GH09-, 2011-06-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360284921833020288
• NII Article ID: 210000070727
• DOI: 10.1143/jjap.50.06gh09
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.06GH09
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.06GH09/pdf
• Data Source:
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  • CiNii Articles
  • KAKEN