Combinatorial Investigation of ZrO₂-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors

• Yuji Kiyota

• Kenji Itaka

• Yuta Iwashita

• Tetsuya Adachi

• Toyohiro Chikyow

• Atsushi Ogura

Abstract

We investigated zirconia (ZrO 2 )-based material libraries in search of new dielectric materials for dynamic random-access memory (DRAM) by combinatorial-pulsed laser deposition (combi-PLD). We found that the substitution of yttrium (Y) to Zr sites in the ZrO 2 system suppressed the leakage current effectively. The metal–insulator–metal (MIM) capacitor property of this system showed a leakage current density of less than 5×10 -7 A/cm 2 and the dielectric constant was 20. Moreover, the addition of titanium (Ti) or tantalum (Ta) to this system caused the dielectric constant to increase to ∼25 within the allowed leakage level of 5×10 -7 A/cm 2 . Therefore, Zr–Y–Ti–O and Zr–Y–Ta–O systems have good potentials for use as new materials with high dielectric constants of DRAM capacitors instead of silicon dioxides (SiO 2 ).

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (6S), 06GH12-, 2011-06-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360847871786442880
• NII Article ID: 210000070730
• DOI: 10.1143/jjap.50.06gh12
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.06GH12
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.06GH12/pdf
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  • CiNii Articles