Reactive Ion Etching of Carbon Nanowalls

• Shingo Kondo

• Hiroki Kondo

• Yudai Miyawaki

• Hajime Sasaki

• Hiroyuki Kano

• Mineo Hiramatsu

• Masaru Hori

Abstract

Two-dimensionally standing graphene sheets, i.e., carbon nanowalls (CNWs), were synthesized on a Si substrate employing a capacitively coupled fluorocarbon plasma-enhanced chemical vapor deposition system together with H radical injection. To apply CNWs in electronic devices and/or membrane filters, we have demonstrated the reactive ion etching (RIE) of CNWs. RIE employing H 2 /N 2 gases showed that the CNW films were anisotropically etched at a relatively high rate of more than 250 nm/min. However, the 10-nm-thick interface layer between a CNW film and the Si substrate remained and the interface layer was not completely etched. In contrast, RIE employing Ar/H 2 gases enabled us to completely remove the interface layer. Ar/H 2 RIE was also carried out from the bottom surface of CNW films after exfoliating them from the Si substrate. As a result, a free-standing CNW film of 550 nm thickness without an interface layer as a membrane filter was successfully formed.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (7R), 075101-, 2011-07-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360566396809774208
• NII Article ID: 210000070850
• DOI: 10.1143/jjap.50.075101
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.075101
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.075101/pdf
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  • CiNii Articles