Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal–Oxide–Semiconductor Field-Effect Transistors and the Optimization Methodology

• Koji Eriguchi

• Yoshinori Nakakubo

• Asahiko Matsuda

• Masayuki Kamei

• Yoshinori Takao

• Kouichi Ono

Abstract

Physical damage induced by high-energy ion bombardment during plasma processing is characterized from the viewpoint of the relationship between surface-damaged layer (silicon loss) and defect site underneath the surface. Parameters for plasma-induced damage (PID), Si recess depth ( d R ) and residual (areal) defect density after wet-etch treatment ( N dam ), are calculated on the basis of a modified range theory, and the trade-off relationship between d R and N dam is presented. We also model their effects on device parameters such as off-state leakage ( I off ) and drain saturation current ( I on ) of n-channel metal–oxide–semiconductor field effect transistors (MOSFETs). Based on the models, we clarify the relationship among plasma process parameters (ion energy and ion flux), d R , N dam , I off , and I on . Then we propose a methodology optimizing ion energy and ion flux under the constraints defined by device specifications I off and I on , via d R and N dam . This procedure is regarded as so-called optimization problems. The proposed methodology is applicable to optimizing plasma parameters that minimize degradation of MOSFET performance by PID.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (8S2), 08KD04-, 2011-08-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360003446856462592
• NII Article ID: 210000139494
• NII Article ID: 210000071116
• DOI: 10.1143/jjap.50.08kd04
• DOI: 10.7567/jjap.50.08kd04
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.08KD04
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.08KD04/pdf
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