Photoassisted Kelvin Probe Force Microscopy on Multicrystalline Si Solar Cell Materials

• Takuji Takahashi

Abstract

A multicrystalline Si solar cell material has been investigated through photovoltaic measurements by photoassisted Kelvin probe force microscopy (P-KFM). Photovoltage distributions mapped by P-KFM exhibited an abrupt change in photovoltage near the Σ3 grain boundary, and those distributions are well related to intrinsic surface potential profiles. In addition, the diffusion length and lifetime of minority carriers were evaluated from the dependence of photovoltage on incident light wavelength and from the temporally averaged photovoltage as a function of modulation frequency, respectively, indicating the reductions in both minority carrier diffusion length and lifetime around the grain boundary. Those results strongly suggest that the grain boundary in the multicrystalline Si material acts as a carrier recombination site and/or a leakage path, which may degrade the overall solar cell performance.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (8S3), 08LA05-, 2011-08-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360003446856468352
• NII Article ID: 210000071129
• DOI: 10.1143/jjap.50.08la05
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.08LA05
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.08LA05/pdf
• Data Source:
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  • CiNii Articles
  • KAKEN