Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal–Oxide–Semiconductor Field-Effect Transistor Electrical Characteristics

• Yuki Kumagai

• Kenichi Abe

• Takafumi Fujisawa

• Shunichi Watabe

• Rihito Kuroda

• Naoto Miyamoto

• Tomoyuki Suwa

• Akinobu Teramoto

• Shigetoshi Sugawa

• Tadahiro Ohmi

Abstract

To develop a new process technology for suppressing the variability and noise in metal–oxide–semiconductor field-effect transistors (MOSFETs) for large-scale integrated circuits, accurate and rapid measurement test circuits for the evaluation of a large number of MOSFET electrical characteristics were developed. These test circuits contain current-to-voltage conversion circuits and simple scanning circuits in order to achieve rapid and accurate evaluation for a wide range of measurement currents. The test circuits were fabricated and the variabilities and noises in drain–source current, gate leakage current, and p–n junction leakage current were evaluated using a large-scale test circuit.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (10R), 106701-, 2011-10-01

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360003446856574336
• NII Article ID: 210000071398
• DOI: 10.1143/jjap.50.106701
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.106701
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.106701/pdf
• Data Source:
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  • CiNii Articles
  • KAKEN