Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium–Yttrium Mixed Oxide

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Abstract

<jats:p> We have studied the chemical bonding features in the region near the TiO<jats:sub>2</jats:sub>/Pt interface after resistance change to gain a better understanding of the mechanism of resistance switching in TiO<jats:sub>2</jats:sub>-based resistance random access memory (ReRAM). For the Pt/TiO<jats:sub>2</jats:sub>/Pt structure after resistance switching, oxidation of the Pt electrode at the Pt/TiO<jats:sub>2</jats:sub> interface in switching from a high resistance state (HRS) to a low resistance state (LRS) and reduction of this Pt-oxide in switching from the LRS to the HRS were observed by hard X-ray photoelectron spectroscopy. The result suggests that the generation of oxygen vacancies in the Ti-oxide matrix is responsible for the formation of the conductive pass resulting in the LRS and that repeatable redox reaction at the Pt/TiO<jats:sub>2</jats:sub> interface plays an important role in resistance switching behavior. To modify the oxide network, which leads to the change in the conduction pass formation, trivalent Y ions were added to the oxide matrix of quadrivalent Ti ions. Raman scattering and X-ray diffraction measurements show that the crystallization of TiO<jats:sub>2</jats:sub> by thermal annealing was suppressed by the Y<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> addition. In Au/TiY<jats:sub> <jats:italic>x</jats:italic> </jats:sub>O<jats:sub> <jats:italic>y</jats:italic> </jats:sub>/Pt structures, it has been demonstrated that the variations in resistance switching voltages are markedly suppressed by the Y<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> addition to TiO<jats:sub>2</jats:sub>. </jats:p>

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