Structural Study of BF₂ Ion Implantation and Post Annealing of BaSi₂ Epitaxial Films

• Kosuke O. Hara

• Noritaka Usami

• Yusuke Hoshi

• Yasuhiro Shiraki

• Mitsushi Suzuno

• Kaoru Toko

• Takashi Suemasu

抄録

We have investigated the effects of BF 2 ion implantation and subsequent annealing on the structure of epitaxial BaSi 2 thin films with the aim of the fabrication of a p-type B-doped BaSi 2 film. After 10 min of annealing at 600 °C and above, BaSi 2 is lost at least partly accompanied by appearance of Si as evidenced by X-ray diffraction and Raman spectroscopy. Element mapping by energy dispersive X-ray spectroscopy revealed that a barium oxide is formed on the surface, which indicates that BaSi 2 is oxidized into a barium oxide and Si during annealing. Such oxidation was found to be suppressed by employing rapid thermal annealing for 30 s even when the annealing temperatures of 700 and 800 °C were chosen. Analysis of the full width at half maximum of the Raman peak showed that the inhomogeneous stress in the film produced by ion implantation can be decreased to the as-grown level by rapid thermal annealing at 700 and 800 °C for 30 s. At the same time, the red shift of the Raman peak is shown, based on which the possibility of B substitution for Si is discussed.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 50 (12R), 121202-, 2011-12-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360284921833331456
• NII論文ID: 210000071523
• DOI: 10.1143/jjap.50.121202
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.121202
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.50.121202/pdf
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