Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiN$_{x}$ Gate Insulator

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Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 51, 06FE18-06FE18, 2012-06-20

    IOP Publishing

Codes

  • NII Article ID (NAID)
    210000072384
  • ISSN
    0021-4922
  • Data Source
    Crossref 
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