Iron Vacancy Ordered γ-Fe<sub>2</sub>O<sub>3</sub>(001) Epitaxial Films: The Crystal Structure and Electrical Resistivity

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  • Yanagihara Hideto
    Institute of Applied Physics, University of Tsukuba
  • Hasegawa Manabu
    Institute of Applied Physics, University of Tsukuba
  • Kita Eiji
    Institute of Applied Physics, University of Tsukuba
  • Wakabayashi Yusuke
    Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization
  • Sawa Hiroshi
    Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization
  • Siratori Kiiti
    Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization

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タイトル別名
  • Iron Vacancy Ordered γ-Fe2O3(001) Epitaxial Films: The Crystal Structure and Electrical Resistivity
  • Iron Vacancy Ordered ガンマ Fe2O3 001 Epitaxial Films The Crystal Structure and Electrical Resistivity

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We report the structural characterization and transport properties of highly-ordered epitaxial γ-Fe2O3 thin films grown by a pure ozone-assisted molecular beam epitaxy method. X ray diffraction (XRD) measurements at a synchrotron facility indicated that the composition of films was close to that of γ-Fe2O3 with Fe vacancy only occurring at octahedral sites of a spinel. We revealed that the crystal symmetry was reduced from a cubic, giving rise to extra superlattice reflections along the c* axis and this showed good agreement with a tetragonal structure with c\\lesssim3a. We succeeded in determining the position of vacancy sites as well as the unit cell by comparing the XRD results with calculated reflection patterns for plausible vacancy ordered models. The temperature dependent resistivity of the vacancy ordered γ-Fe2O3 was several orders higher than that of Fe3O4.

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