Site-Specific Atomic and Electronic Structure Analysis of Epitaxial Silicon Oxynitride Thin Film on SiC(0001) by Photoelectron and Auger Electron Diffractions

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Author(s)

    • Maejima Naoyuki
    • Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
    • Matsui Fumihiko
    • Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
    • Matsui Hirosuke
    • Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
    • Goto Kentaro
    • Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan
    • Matsushita Tomohiro
    • Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, Sayo, Hyogo 679-5198, Japan
    • Tanaka Satoru
    • Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan
    • Daimon Hiroshi
    • Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Ikoma, Nara 630-0192, Japan

Journal

  • Journal of the Physical Society of Japan

    Journal of the Physical Society of Japan 83(4), 044604-044604, 2014-04-15

    Physical Society of Japan

Codes

  • NII Article ID (NAID)
    210000133039
  • ISSN
    0031-9015
  • Data Source
    Crossref 
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