Effect of Si Substitution on the Antiferromagnetic Ordering in the Kondo Semiconductor CeRu<sub>2</sub>Al<sub>10</sub>
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- Kyosuke Hayashi
- Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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- Yuji Muro
- Department of Intelligent Systems Design Engineering, Faculty of Engineering, Toyama Prefectural University, Imizu, Toyama 939-0398, Japan
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- Tadashi Fukuhara
- Department of Intelligent Systems Design Engineering, Faculty of Engineering, Toyama Prefectural University, Imizu, Toyama 939-0398, Japan
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- Jo Kawabata
- Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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- Tomohiko Kuwai
- Graduate School of Science and Engineerings, University of Toyama, Toyama 930-8555, Japan
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- Toshiro Takabatake
- Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
収録刊行物
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- Journal of the Physical Society of Japan
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Journal of the Physical Society of Japan 85 (3), 034714-, 2016-03-15
Physical Society of Japan
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詳細情報 詳細情報について
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- CRID
- 1360284924858254464
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- NII論文ID
- 210000133873
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- ISSN
- 13474073
- 00319015
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- データソース種別
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- CiNii Articles
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