Effect of Si Substitution on the Antiferromagnetic Ordering in the Kondo Semiconductor CeRu<sub>2</sub>Al<sub>10</sub>

  • Kyosuke Hayashi
    Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
  • Yuji Muro
    Department of Intelligent Systems Design Engineering, Faculty of Engineering, Toyama Prefectural University, Imizu, Toyama 939-0398, Japan
  • Tadashi Fukuhara
    Department of Intelligent Systems Design Engineering, Faculty of Engineering, Toyama Prefectural University, Imizu, Toyama 939-0398, Japan
  • Jo Kawabata
    Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
  • Tomohiko Kuwai
    Graduate School of Science and Engineerings, University of Toyama, Toyama 930-8555, Japan
  • Toshiro Takabatake
    Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

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