Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 58 (1), 011004-, 2018-11-28
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360847874812505856
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- NII論文ID
- 210000135245
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- ISSN
- 13474065
- 00214922
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- データソース種別
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- Crossref
- CiNii Articles
- KAKEN