Impact of interface recombination on direct-gap photoluminescence from Ge epitaxial layers on Si

• Motoki Yako

• Naoki Higashitarumizu

• Yasuhiko Ishikawa

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 58 (SB), SBBE08-, 2019-03-05

  IOP Publishing

Keywords

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

Details

• CRID: 1360566399835870592
• NII Article ID: 210000135389
• DOI: 10.7567/1347-4065/aafd96
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/58/i=SB/a=SBBE08/pdf
• Web Site: http://stacks.iop.org/1347-4065/58/i=SB/a=SBBE08?key=crossref.a587b7c4ef34beecf8b99b480186dbdc
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN