Transition mechanism of the thin Si-films obtained by the CW laser lateral crystallization from the grain-boundary free highly {100} oriented crystal to the twinned {211} crystal depending on the laser power
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 58 (SB), SBBJ02-, 2019-02-22
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360003449882468608
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- NII Article ID
- 210000135418
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- ISSN
- 13474065
- 00214922
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- Data Source
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- Crossref
- CiNii Articles
- KAKEN