Gibbs–Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC

• Kazuhiro Mochizuki

• Shiyang Ji

• Kohei Adachi

• Ryoji Kosugi

• Yoshiyuki Yonezawa

• Hajime Okumura

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 58 (5), 051009-, 2019-04-10

  IOP Publishing

キーワード

• General Physics and Astronomy
• Physics and Astronomy (miscellaneous)
• General Engineering

詳細情報

• CRID: 1360284924859211648
• NII論文ID: 210000135462
• DOI: 10.7567/1347-4065/ab0342
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://iopscience.iop.org/article/10.7567/1347-4065/ab0342
• Web Site: http://iopscience.iop.org/article/10.7567/1347-4065/ab0342/pdf
• Web Site: http://stacks.iop.org/1347-4065/58/i=5/a=051009/pdf
• Web Site: http://stacks.iop.org/1347-4065/58/i=5/a=051009?key=crossref.93b7c6f632c047f42ca5bbcc09967f70
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