Physical and electrical properties of ALD-Al₂O₃/GaN MOS capacitor annealed with high pressure water vapor

• Yuta Fujimoto

• Mutsunori Uenuma

• Tsubasa Nakamura

• Masaaki Furukawa

• Yasuaki Ishikawa

• Yukiharu Uraoka

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 58 (4), 040902-, 2019-03-27

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360284924859267840
• NII Article ID: 210000135492
• DOI: 10.7567/1347-4065/ab09a2
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://iopscience.iop.org/article/10.7567/1347-4065/ab09a2
• Web Site: http://iopscience.iop.org/article/10.7567/1347-4065/ab09a2/pdf
• Web Site: http://stacks.iop.org/1347-4065/58/i=4/a=040902/pdf
• Web Site: http://stacks.iop.org/1347-4065/58/i=4/a=040902?key=crossref.831b9873a5d73847e1d397c064e8b19d
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN