Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy

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Journal

  • Applied Physics Express

    Applied Physics Express 12(2), 025502-025502, 2019-02-01

    IOP Publishing

Codes

  • NII Article ID (NAID)
    210000135591
  • ISSN
    1882-0778
  • Data Source
    Crossref 
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