Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy
Journal
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- Applied Physics Express
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Applied Physics Express 12 (2), 025502-, 2019-02-01
IOP Publishing
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Details 詳細情報について
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- CRID
- 1360566399836547328
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- NII Article ID
- 210000135591
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- ISSN
- 18820786
- 18820778
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- Data Source
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- Crossref
- CiNii Articles
- KAKEN