Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy

• Yasuto Akatsuka

• Sho Iwayama

• Tetsuya Takeuchi

• Satoshi Kamiyama

• Motoaki Iwaya

• Isamu Akasaki

収録刊行物

• Applied Physics Express

  Applied Physics Express 12 (2), 025502-, 2019-02-01

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360566399836547328
• NII論文ID: 210000135591
• DOI: 10.7567/1882-0786/aafca8
• ISSN: 18820786
• ISSN: 18820778
• Web Site: http://stacks.iop.org/1882-0786/12/i=2/a=025502?key=crossref.f069e51da020d3bc9aa4837fe88801cc
• Web Site: http://iopscience.iop.org/article/10.7567/1882-0786/aafca8/pdf
• Web Site: http://stacks.iop.org/1882-0786/12/i=2/a=025502/pdf
• Web Site: http://iopscience.iop.org/article/10.7567/1882-0786/aafca8
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