Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing

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Journal

  • Applied Physics Express

    Applied Physics Express 12(3), 031001-031001, 2019-02-14

    IOP Publishing

Codes

  • NII Article ID (NAID)
    210000135625
  • ISSN
    1882-0778
  • Data Source
    Crossref 
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