Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal–oxide–semiconductor field-effect transistor

• Masahiro Hori

• Toshiaki Tsuchiya

• Yukinori Ono

抄録

Charge-pumping electrically detected magnetic resonance (CP EDMR), or EDMR in the CP mode, is improved and applied to a silicon metal–oxide–semiconductor field-effect transistor (MOSFET). Real-time monitoring of the CP process reveals that high-frequency transient currents are an obstacle to signal amplification for EDMR. Therefore, we introduce cutoff circuitry, leading to a detection limit for the number of spins as low as 10 3 for Si MOS interface defects. With this improved method, we demonstrate that CP EDMR inherits one of the most important features of the CP method: the gate control of the energy window of the detectable interface defects for spectroscopy.

収録刊行物

• Applied Physics Express

  Applied Physics Express 10 (1), 015701-, 2016-12-15

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360846646288874752
• NII論文ID: 210000135738
• DOI: 10.7567/apex.10.015701
• ISSN: 18820786
• ISSN: 18820778
• Web Site: http://stacks.iop.org/1882-0786/10/i=1/a=015701/pdf
• Web Site: http://stacks.iop.org/1882-0786/10/i=1/a=015701?key=crossref.1dfbb8fb6d86b686941fc68cd428fb34
• Web Site: https://iopscience.iop.org/article/10.7567/APEX.10.015701
• Web Site: https://iopscience.iop.org/article/10.7567/APEX.10.015701/pdf
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