Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template

• Toshiki Yasuda

• Tetsuya Takeuchi

• Motoaki Iwaya

• Satoshi Kamiyama

• Isamu Akasaki

• Hiroshi Amano

Journal

• Applied Physics Express

  Applied Physics Express 10 (2), 025502-, 2017-01-30

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360002221358745344
• NII Article ID: 210000135770
• DOI: 10.7567/apex.10.025502
• ISSN: 18820786
• ISSN: 18820778
• ISSN: http://id.crossref.org/issn/18820786
• Web Site: http://stacks.iop.org/1882-0786/10/i=2/a=025502/pdf
• Web Site: http://stacks.iop.org/1882-0786/10/i=2/a=025502?key=crossref.4e4b0fd68099226ed1cf70fc0b33b2db
• Data Source:
  • Crossref
  • CiNii Articles
  • KAKEN