Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering

• Kohei Ueno

• Yasuaki Arakawa

• Atsushi Kobayashi

• Jitsuo Ohta

• Hiroshi Fujioka

収録刊行物

• Applied Physics Express

  Applied Physics Express 10 (10), 101002-, 2017-09-19

  IOP Publishing

詳細情報

• CRID: 1360284924860266240
• NII論文ID: 210000135984
• DOI: 10.7567/apex.10.101002
• ISSN: 18820786
• ISSN: 18820778
• Web Site: http://stacks.iop.org/1882-0786/10/i=10/a=101002/pdf
• Web Site: http://stacks.iop.org/1882-0786/10/i=10/a=101002?key=crossref.351cbca8bb5ebd90760feb0e766e769d
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