Direct probing of gate-bias stress effect in organic transistors by electron spin resonance spectroscopy

• Hisaaki Tanaka

• Eishi Sawada

• Kenjiro Azuma

• Shin-ichi Kuroda

収録刊行物

• Applied Physics Express

  Applied Physics Express 8 (5), 051603-, 2015-04-22

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360003449884365696
• NII論文ID: 210000137496
• DOI: 10.7567/apex.8.051603
• ISSN: 18820786
• ISSN: 18820778
• Web Site: http://stacks.iop.org/1882-0786/8/i=5/a=051603/pdf
• Web Site: http://stacks.iop.org/1882-0786/8/i=5/a=051603?key=crossref.6dd7196b538fca639b8a2c635120807f
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