Solution-processed dinaphtho[2,3-<i>b</i>:2′,3′-<i>f</i>]thieno[3,2-<i>b</i>]thiophene transistor memory based on phosphorus-doped silicon nanoparticles as a nano-floating gate

• Yu Kimura

• Azusa Hamaguchi

• Yoshinori Ikeda

• Takashi Nagase

• Hiroyoshi Naito

• Kazuo Takimiya

• Takashi Shiro

収録刊行物

• Applied Physics Express

  Applied Physics Express 8 (10), 101601-, 2015-09-18

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360284924861150208
• NII論文ID: 210000137666
• DOI: 10.7567/apex.8.101601
• ISSN: 18820786
• ISSN: 18820778
• Web Site: http://stacks.iop.org/1882-0786/8/i=10/a=101601/pdf
• Web Site: http://stacks.iop.org/1882-0786/8/i=10/a=101601?key=crossref.c2fb2f553f331660f18710c83d0c95d4
• データソース種別:
  • Crossref
  • CiNii Articles
  • KAKEN