Annealing of an AlN buffer layer in N₂–CO for growth of a high-quality AlN film on sapphire

• Hideto Miyake

• Gou Nishio

• Shuhei Suzuki

• Kazumasa Hiramatsu

• Hiroyuki Fukuyama

• Jesbains Kaur

• Noriyuki Kuwano

Abstract

The annealing of an AlN buffer layer in a carbon-saturated N 2 –CO gas on a sapphire substrate was investigated. The crystal quality of the buffer layer was significantly improved by annealing at 1650–1700 °C. An AlN buffer layer with a thickness of 300 nm was grown by metalorganic vapor phase epitaxy (MOVPE), and was annealed at 1700 °C for 1 h. We fabricated a 2-µm-thick AlN layer on the annealed AlN buffer layer by MOVPE. The full widths at half maximum of the (0002)- and ( <?CDATA $10\bar{1}2$?> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="AP150907if001.gif" xlink:type="simple" /> )-plane X-ray rocking curves were 16 and 154 arcsec, respectively, and the threading dislocation density was 4.7 × 10 8 cm −2 .

Journal

• Applied Physics Express

  Applied Physics Express 9 (2), 025501-, 2016-01-06

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360283696335595136
• NII Article ID: 210000137795
• DOI: 10.7567/apex.9.025501
• ISSN: 18820786
• ISSN: 18820778
• ISSN: http://id.crossref.org/issn/18820786
• Web Site: https://iopscience.iop.org/article/10.7567/APEX.9.025501
• Web Site: https://iopscience.iop.org/article/10.7567/APEX.9.025501/pdf
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