Observation of localized states in bulk GaAs using ultrafast photocurrent beat spectroscopy

• Hirokazu Tahara

• Yoshihiko Kanemitsu

Abstract

We report photocurrent (PC)-generation processes in bulk GaAs at low temperatures revealed by PC beat spectroscopy and photoluminescence (PL) measurements. Because the time-domain PC spectroscopy is highly sensitive to PC-generation processes, several PC generation sites, including localized states, were identified. The difference between the PC beat and PL spectra shows that a non-luminescent bound-exciton state predominantly generates PC at intermediate temperatures, which is difficult to observe using steady-state PC and PL measurements. Thus, PC beat spectroscopy provides detailed understanding of the PC-generation processes in semiconductors.

Journal

• Applied Physics Express

  Applied Physics Express 9 (3), 032403-, 2016-02-04

  IOP Publishing

Keywords

• General Physics and Astronomy
• General Engineering

Details

• CRID: 1360284924861214208
• NII Article ID: 210000137820
• DOI: 10.7567/apex.9.032403
• ISSN: 18820786
• ISSN: 18820778
• ISSN: http://id.crossref.org/issn/18820786
• Web Site: http://stacks.iop.org/1882-0786/9/i=3/a=032403/pdf
• Web Site: http://stacks.iop.org/1882-0786/9/i=3/a=032403?key=crossref.97ee5a047ccaa773eba8c87a44d18318
• Web Site: https://iopscience.iop.org/article/10.7567/APEX.9.032403
• Web Site: https://iopscience.iop.org/article/10.7567/APEX.9.032403/pdf
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