Crystal phase transition to green emission wurtzite AlInP by crystal structure transfer

• Yoshihiro Hiraya

• Fumiya Ishizaka

• Katsuhiro Tomioka

• Takashi Fukui

抄録

We grew AlInP on two types of GaN substrate in order to transfer the wurtzite (WZ) structure to grown layers. An AlInP epitaxial layer grown on GaN <?CDATA $(10\bar{1}0)$?> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="AP151071if001.gif" xlink:type="simple" /> with high-density stacking faults was obtained. X-ray diffraction and Raman scattering analyses indicate that the dominant crystal structure of the AlInP layer grown on GaN <?CDATA $(10\bar{1}0)$?> <jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="AP151071if002.gif" xlink:type="simple" /> was WZ. Cathode luminescence measurements at 35 K revealed strong green emissions from the WZ AlInP layer, suggesting an energy band gap change from indirect to direct. These results demonstrate the potential of WZ AlInP as a new candidate for high-efficiency green emission material.

収録刊行物

• Applied Physics Express

  Applied Physics Express 9 (3), 035502-, 2016-02-03

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360847874814642560
• NII論文ID: 210000137834
• DOI: 10.7567/apex.9.035502
• ISSN: 18820786
• ISSN: 18820778
• Web Site: http://stacks.iop.org/1882-0786/9/i=3/a=035502/pdf
• Web Site: http://stacks.iop.org/1882-0786/9/i=3/a=035502?key=crossref.390826df295ef8afa8133e4adfd2775e
• Web Site: https://iopscience.iop.org/article/10.7567/APEX.9.035502
• Web Site: https://iopscience.iop.org/article/10.7567/APEX.9.035502/pdf
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