N-type conduction in SnS by anion substitution with Cl

• Hiroshi Yanagi

• Yuki Iguchi

• Taiki Sugiyama

• Toshio Kamiya

• Hideo Hosono

抄録

Relatively nontoxic, earth-abundant Cl was incorporated into n-type SnS as a dopant. The existence of impurity phases was carefully identified in Sn(S 1− x − y Cl x )-dense ceramics. The highest electron mobility (8.3 cm 2 V −1 s −1 ) in n-type conduction was achieved in samples with x ≥ 0.005. Cl concentration is critical for conduction-type conversion, whereas carrier density and electron mobility are determined by sulfur-site deficiency. Carrier transport is explained by grain boundary potential barrier scattering in undoped p-type samples and by ionized impurity scattering in Cl-doped n-type samples.

収録刊行物

• Applied Physics Express

  Applied Physics Express 9 (5), 051201-, 2016-04-22

  IOP Publishing

キーワード

• General Physics and Astronomy
• General Engineering

詳細情報

• CRID: 1360847874814664064
• NII論文ID: 210000137871
• DOI: 10.7567/apex.9.051201
• ISSN: 18820786
• ISSN: 18820778
• ISSN: http://id.crossref.org/issn/18820786
• Web Site: http://stacks.iop.org/1882-0786/9/i=5/a=051201/pdf
• Web Site: http://stacks.iop.org/1882-0786/9/i=5/a=051201?key=crossref.cccbc25957ab937f5944bb70134d6a48
• Web Site: https://iopscience.iop.org/article/10.7567/APEX.9.051201
• Web Site: https://iopscience.iop.org/article/10.7567/APEX.9.051201/pdf
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